• DocumentCode
    1653548
  • Title

    Dominant SILC mechanisms in HFO2TiN gate nMOS and pMOS transistors

  • Author

    Krishnan, Siddarth A. ; Peterson, Jeff J. ; Young, Chadwin D. ; Brown, George ; Choi, Rino ; Harris, Rusty ; Sim, Jang Hoan ; Zeitzoff, Peter ; Kirsch, Paul ; Gutt, Jim ; Li, Hong Jyh ; Matthews, Ken ; Lee, Jack C. ; Byoung Hun Lee ; Bersuker, Gennadi

  • Author_Institution
    SEMATECH, Austin, TX, USA
  • fYear
    2005
  • Firstpage
    642
  • Lastpage
    643
  • Keywords
    CMOS integrated circuits; MOSFET; dielectric materials; electron traps; hafnium compounds; integrated circuit reliability; leakage currents; semiconductor device reliability; stress effects; titanium compounds; tunnelling; CMOS product flow; HfO2-TiN; SILC mechanisms; electron traps; electron tunneling; energy barrier; hafnium dioxide titanium nitride gate stacks; high-k dielectrics; nMOS transistors; pMOS transistors; silicon dioxide poly-silicon gate stacks; stress-induced degradation; stress-induced leakage current; threshold voltage shift; trap generation; Dielectric substrates; Electron traps; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOS devices; MOSFETs; Stress measurement; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493183
  • Filename
    1493183
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653548