• DocumentCode
    1653576
  • Title

    Significant improvement in reliability of HfSiON gate insulator

  • Author

    Inoue, M. ; Yugami, J. ; Fujita, F. ; Shiga, K. ; Mizutani, M. ; Nomura, K. ; Tsuchimoto, J. ; Ohno, Y. ; Yoneda, M.

  • fYear
    2005
  • Firstpage
    644
  • Lastpage
    645
  • Keywords
    dielectric thin films; electron traps; hafnium compounds; hot carriers; insulated gate field effect transistors; interface states; semiconductor device reliability; silicon compounds; HfSiON; SiON; channel hot carrier stress; electron trapping efficiency; gate dielectric structure; gate insulator interface layer; gate insulator reliability; interface trapping; nFET; positive bias temperature stress; post-deposition-annealing; threshold voltage shift; Chemicals; Dielectrics; Electron traps; Hot carriers; Insulation; Plasma temperature; Reliability engineering; Stress; Thermal degradation; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493184
  • Filename
    1493184
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653576