• DocumentCode
    1653656
  • Title

    Reliability failures due to charge injection in SOI under high voltage conditions

  • Author

    Bruggers, H. Jan ; Weijland-Emmerik, I.M. ; Rongen, R.T.H.

  • Author_Institution
    Philips Semicond. Consumer Syst. Nijmegen, Netherlands
  • fYear
    2005
  • Firstpage
    650
  • Lastpage
    651
  • Keywords
    charge injection; doping profiles; optimisation; power MOSFET; semiconductor device reliability; silicon-on-insulator; HV-PDMOST reliability; SOI; charge injection reliability failures; degradation phenomenon; doping profiles; drift region dimensions; drift region local electrical field conditions; drift region optimization; low-temperature high voltage conditions; Degradation; Doping; High intensity discharge lamps; Leakage current; Silicon on insulator technology; Space vector pulse width modulation; Stress; Temperature; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493187
  • Filename
    1493187
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653656