• DocumentCode
    1653663
  • Title

    Novel, 100V, Trench Super Junction high voltage TFTs using low temperature poly crystalline silicon

  • Author

    Dhyani, M.H. ; Green, D. ; Sweet, M. ; Narayanan, M. E Sankara ; Deane, S.C. ; Young, N.D.

  • Author_Institution
    Dept. of EEE, Sheffield Univ., Sheffield, UK
  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    First results of 100 V, novel Trench Super Junction HVTFTs fully compatible to the LTPS technology are presented. They exhibit ON/OFF current ratio of more than 107 with sub-threshold swing of 0.75 V/decade and specific resistance (Rsp) of 40 ¿mm2.The influence of geometric parameters on both unipolar and bipolar devices is analysed.
  • Keywords
    cryogenic electronics; silicon; thin film transistors; LTPS technology; bipolar devices; geometric parameters; low temperature poly crystalline silicon; specific resistance; trench super junction high voltage TFT; unipolar devices; voltage 100 V; Costs; Crystallization; Displays; Electrodes; Fingers; Implants; Low voltage; Silicon; Temperature; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424386
  • Filename
    5424386
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653663