• DocumentCode
    1653745
  • Title

    Interconnect scaling-the real limiter to high performance ULSI

  • Author

    Bohr, Mark T.

  • Author_Institution
    Portland Technol. Development, Intel Corp., Hillsboro, OR, USA
  • fYear
    1995
  • Firstpage
    241
  • Lastpage
    244
  • Abstract
    Reducing interconnect pitch improves layout density, but degrades interconnect RC delay. Increasing metal aspect ratio (thickness/width) improves RC delay, but maximum benefits are achieved at an aspect ratio of ~2. Adding more interconnect layers improves density and performance, but practical limits are reached in just a few generations. New conductor and dielectric materials and improved circuit design techniques will be needed to meet future ULSI interconnect requirements
  • Keywords
    ULSI; delays; integrated circuit interconnections; integrated circuit layout; integrated circuit metallisation; Interconnect scaling; circuit design techniques; conductor and dielectric materials; dielectric materials; high performance ULSI; interconnect pitch reduction; Capacitance; Conducting materials; Conductivity; Degradation; Delay estimation; Dielectric materials; Equations; Integrated circuit interconnections; Integrated circuit modeling; Ultra large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499187
  • Filename
    499187