DocumentCode
1653745
Title
Interconnect scaling-the real limiter to high performance ULSI
Author
Bohr, Mark T.
Author_Institution
Portland Technol. Development, Intel Corp., Hillsboro, OR, USA
fYear
1995
Firstpage
241
Lastpage
244
Abstract
Reducing interconnect pitch improves layout density, but degrades interconnect RC delay. Increasing metal aspect ratio (thickness/width) improves RC delay, but maximum benefits are achieved at an aspect ratio of ~2. Adding more interconnect layers improves density and performance, but practical limits are reached in just a few generations. New conductor and dielectric materials and improved circuit design techniques will be needed to meet future ULSI interconnect requirements
Keywords
ULSI; delays; integrated circuit interconnections; integrated circuit layout; integrated circuit metallisation; Interconnect scaling; circuit design techniques; conductor and dielectric materials; dielectric materials; high performance ULSI; interconnect pitch reduction; Capacitance; Conducting materials; Conductivity; Degradation; Delay estimation; Dielectric materials; Equations; Integrated circuit interconnections; Integrated circuit modeling; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499187
Filename
499187
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