Integration of single crystal Si TFTs and circuits on a large glass substrate

Author

Takafuji, Y. ; Fukushima, Y. ; Tomiyasu, K. ; Takei, M. ; Ogawa, Y. ; Tada, K. ; Matsumoto, S. ; Kobayashi, H. ; Watanabe, Y. ; Kobayashi, E. ; Droes, S.R. ; Voutsas, A.T. ; Hartzell, J.

Author_Institution

Corp. R&D Group, Sharp Corp., Nara, Japan

fYear

2009

Firstpage

1

Lastpage

4

Abstract

Submicron single crystal-Si TFTs and a test circuit are integrated on a 320 mm Ã— 400 mm ( Gen 1 ) glass substrate for the first time, by transferring devices using hydrogen exfoliation and direct bonding without adhesive. Characteristics of the NMOS-TFT is comparable with that of SOI, while PMOS-TFT shows some degradation of sub-threshold swing. Transferred CMOS show high performance and shift register function at 400 MHz (clock frequency) with power supply of 3 V. Transferred die size was 15 mm Ã— 15 mm.

Keywords

CMOS integrated circuits; elemental semiconductors; glass; integrated circuit bonding; silicon; substrates; thin film circuits; thin film transistors; NMOS TFT; PMOS TFT; Si; TFT circuit; direct bonding; glass substrate; hydrogen exfoliation; single crystal TFT; size 15 mm; thin film transistor; voltage 3 V; Annealing; Bonding; Circuits; Glass; Liquid crystal devices; Lithography; Substrates; Temperature; Thin film transistors; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424390

Filename

5424390