DocumentCode
1653787
Title
Determination of the acceleration factor between wafer level and package level electromigration test
Author
Federspiel, X. ; Ney, D. ; Girault, V.
Author_Institution
CR&D labs, Philips Semicond., Crolles, France
fYear
2005
Firstpage
658
Lastpage
659
Keywords
copper; current density; electromigration; extrapolation; life testing; stress effects; temperature; Blech effect; Cu; Joule heating; acceleration factor; activation energy; current density; current density conditions; current exponent; extrapolated lifetime; numerical model; package level electromigration test; temperature gradient; wafer level electromigration test; Copper; Current density; Electromigration; Life estimation; Life testing; Packaging; Performance evaluation; Semiconductor device modeling; Thermal stresses; Wafer scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN
0-7803-8803-8
Type
conf
DOI
10.1109/RELPHY.2005.1493191
Filename
1493191
Link To Document