Title :
Integrated high performance (100) and (110) oriented single-grain Si TFTs without seed substrate
Author :
Chen, Tao ; Ishihara, Ryoichi ; van der Cingel, Johan ; Alessandro, Baiano ; Mofrad, M. R Tajari ; Schellevis, Hugo ; Beenakker, Kees
Author_Institution :
Delft Inst. of Microsyst. & Nanoelectron. Technol. (DIMES), Delft Univ. of Technol., Delft, Netherlands
Abstract :
We report high performance (100) and (110) oriented single-grain thin-film-transistors (SG-TFTs) fabricated below 600°C without any seed substrate. The orientation has been contolled by ¿-Czochralski process with the excimer laser. Field-effect mobility of n-channel transistor is 998cm2/Vs for (100) SG-TFTs and 811cm2/Vs for (110) SG-TFTs. Field-effect mobility of p-channel transistor is 292cm2/Vs for (100) SG-TFT and 429cm2/Vs for (110) SG-TFTs.
Keywords :
crystal growth from melt; elemental semiconductors; excimer lasers; silicon; thin film transistors; Si; excimer laser; field-effect mobility; n-channel transistor; oriented single-grain Si TFT; oriented single-grain thin-film-transistors; p-channel transistor; seed substrate; ¿-Czochralski process; Annealing; CMOS technology; Charge carrier processes; Crystallography; Dry etching; Electron mobility; Filters; Nanoelectronics; Substrates; Thin film transistors;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424392
