Integrated high performance (100) and (110) oriented single-grain Si TFTs without seed substrate

Author

Chen, Tao ; Ishihara, Ryoichi ; van der Cingel, Johan ; Alessandro, Baiano ; Mofrad, M. R Tajari ; Schellevis, Hugo ; Beenakker, Kees

Author_Institution

Delft Inst. of Microsyst. & Nanoelectron. Technol. (DIMES), Delft Univ. of Technol., Delft, Netherlands

fYear

2009

Firstpage

1

Lastpage

4

Abstract

We report high performance (100) and (110) oriented single-grain thin-film-transistors (SG-TFTs) fabricated below 600Â°C without any seed substrate. The orientation has been contolled by Â¿-Czochralski process with the excimer laser. Field-effect mobility of n-channel transistor is 998cm²/Vs for (100) SG-TFTs and 811cm²/Vs for (110) SG-TFTs. Field-effect mobility of p-channel transistor is 292cm²/Vs for (100) SG-TFT and 429cm²/Vs for (110) SG-TFTs.

Keywords

crystal growth from melt; elemental semiconductors; excimer lasers; silicon; thin film transistors; Si; excimer laser; field-effect mobility; n-channel transistor; oriented single-grain Si TFT; oriented single-grain thin-film-transistors; p-channel transistor; seed substrate; Â¿-Czochralski process; Annealing; CMOS technology; Charge carrier processes; Crystallography; Dry etching; Electron mobility; Filters; Nanoelectronics; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424392

Filename

5424392