Title :
Influence of diffusion barrier on reliability. Identification of diffusion paths in CU / porous low K interconnect
Author :
Guillaumond, J.F. ; Arnaud, Laurent ; Guedj, C. ; Arnal, V. ; Besling, W.F.A. ; Reimbold, C. ; Dupeux, M. ; Torres, J.
Author_Institution :
STMicroelectronics, Crolles, France
Keywords :
copper; dielectric materials; diffusion barriers; electromigration; integrated circuit interconnections; integrated circuit reliability; porous materials; semiconductor device reliability; 0 to 45 nm; Cu; copper/porous low k interconnect; deposition process; diffusion barrier; diffusion paths; electromigration; liner thickness; metal barrier thickness; reliability; Atherosclerosis; Chemical vapor deposition; Copper; Dielectric materials; Electromigration; Grain boundaries; Research and development; Stress; Temperature; Testing;
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
DOI :
10.1109/RELPHY.2005.1493192
