Title :
A novel Dual String NOR (DuSNOR) memory cell technology scalable to the 256 Mbit and 1 Mbit flash memories
Author :
Kim, K.-S. ; Kim, J.-Y. ; Yoo, J.W. ; Choi, Y.B. ; Kim, M.K. ; Nam, B.Y. ; Park, K.T. ; Ahn, S.T. ; Kwon, O.H.
Author_Institution :
Samsung Electronics Co. Ltd., Kyungki-Do, South Korea
Abstract :
We have developed a novel NOR-type flash memory technology named Dual String NOR (DuSNOR). In the DuSNOR cell array, two adjacent cell strings share a source line and up to 128 cell transistors can be attached to a string. This makes the cell size of DuSNOR smaller than NAND, without sacrificing the advantages of the NOR-type cell. Both the program and erase operations utilize the Fowler-Nordheim tunneling. DuSNOR cells with a cell size of 1.60 μm2 was fabricated using 0.5 μm design rules. It was found that the DuSNOR cell has a fast operating speed, reduced overprogram and disturb problems, and excellent endurance characteristics. DuSNOR is a promising technology for high density, high speed, and random-access flash memories with a small cell size, excellent device characteristics and simplicity in the fabrication process
Keywords :
EPROM; NOR circuits; integrated circuit technology; integrated memory circuits; 0.5 micron; 1 Gbit; 256 Mbit; DuSNOR; Fowler-Nordheim tunneling; disturb; dual string NOR memory cell technology; endurance; fabrication; flash memories; high density high speed random-access memories; overprogram; Consumer electronics; EPROM; Electrons; Fabrication; Flash memory; Flash memory cells; Magnetic memory; Nonvolatile memory; Power dissipation; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499192
