• DocumentCode
    1653903
  • Title

    A highly reliable NAND structure flash memory capable for low voltage operation

  • Author

    Lin, Y.C. ; Lai, C.S. ; Chung, S.S. ; Yang, Evans ; Pittikoun, S. ; Tzeng, S.-M. ; Hsu, C.C.-H.

  • fYear
    2005
  • Firstpage
    666
  • Lastpage
    667
  • Keywords
    electric potential; flash memories; integrated circuit reliability; logic gates; semiconductor device reliability; tunnelling; NAND structure flash memory; bit-line contact; buried bit-line AND; cell reliability; data retention; endurance; erase voltage; low voltage operation; programming voltage; tunneling; word-line; Bismuth; Electrons; Flash memory; Low voltage; Nonvolatile memory; Plugs; Power engineering and energy; Reliability engineering; Temperature; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493195
  • Filename
    1493195
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653903