1653903

A highly reliable NAND structure flash memory capable for low voltage operation

Lin, Y.C. ; Lai, C.S. ; Chung, S.S. ; Yang, Evans ; Pittikoun, S. ; Tzeng, S.-M. ; Hsu, C.C.-H.

2005

666

667

electric potential; flash memories; integrated circuit reliability; logic gates; semiconductor device reliability; tunnelling; NAND structure flash memory; bit-line contact; buried bit-line AND; cell reliability; data retention; endurance; erase voltage; low voltage operation; programming voltage; tunneling; word-line; Bismuth; Electrons; Flash memory; Low voltage; Nonvolatile memory; Plugs; Power engineering and energy; Reliability engineering; Temperature; Tunneling;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493195

1493195