• DocumentCode
    1653904
  • Title

    Normally-off 5A/1100V GaN-on-silicon device for high voltage applications

  • Author

    Boutros, K.S. ; Burnham, S. ; Wong, D. ; Shinohara, K. ; Hughes, B. ; Zehnder, D. ; McGuire, C.

  • fYear
    2009
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We report the DC and switching performance of a normally-off 5 A/1100 V GaN-on-Si device. The device had a breakdown field of 95 V/¿m and a VB 2/Ron,sp of 272 MW/cm2. A 360 V/180 W boost converter was operated at 200 KHz, with an efficiency >92%. Respectively, these values are the highest for a normally-off GaN-on-Si device.
  • Keywords
    III-V semiconductors; elemental semiconductors; gallium compounds; high electron mobility transistors; power semiconductor devices; silicon; switching convertors; wide band gap semiconductors; DC performance; GaN-Si; GaN-on-silicon device; HEMT; boost converter; breakdown field; current 5 A; frequency 200 kHz; high voltage applications; power 180 W; switching performance; voltage 1100 V; voltage 360 V; Electric breakdown; Electrical resistance measurement; Gallium nitride; Power generation; Silicon; Substrates; Switches; Switching converters; Switching loss; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2009 IEEE International
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4244-5639-0
  • Electronic_ISBN
    978-1-4244-5640-6
  • Type

    conf

  • DOI
    10.1109/IEDM.2009.5424396
  • Filename
    5424396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1653904