1653927

Dielectric engineering in nanocrystal memory devices for improved programming dynamics

Lee, Jong Jin ; Bai, Wciping ; Kwong, Dim-Lee

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

2005

668

669

dielectric devices; integrated memory circuits; nanostructured materials; random-access storage; Fowler-Nordheim programming regime; Si; control barrier; dielectric engineering; high-k dielectrics; nonvolatile memory; programming dynamics; programming instability; silicon nanocrystal memory device; Dielectric devices; Dynamic programming; Electrons; High K dielectric materials; High-K gate dielectrics; Nanocrystals; Nonvolatile memory; Silicon; Tunneling; Voltage control;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493196

1493196