DocumentCode :
1653962
Title :
Effect of STI shape and tunneling oxide thinning on cell VTH variation in the flash memory
Author :
Lee, JaiDong ; Kim, JungHwan ; Lee, Woong ; Lee, Sanghoon ; Lim, HunYoung ; Lee, Jaeduk ; Nam, Seokwoo ; Lee, HyeonDeok ; Yong, Chang
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin, South Korea
fYear :
2005
Firstpage :
670
Lastpage :
671
Keywords :
electric current; electric potential; flash memories; isolation technology; oxidation; tunnelling; activation energy; cell threshold voltage variation; erase operation; floating gate flash memory; oxidation process; program operation; shallow trench isolation shape; tunnel oxide thickness; tunnel oxide thinning; tunneling oxide thinning; uncontrolled gate current; Fabrication; Flash memory; Flash memory cells; Length measurement; Medical simulation; Oxidation; Plasmas; Shape; Space exploration; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
Type :
conf
DOI :
10.1109/RELPHY.2005.1493197
Filename :
1493197
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1653962
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