Title :
Novel electron injection method using band-to-band tunneling induced hot electrons (BBHE) for flash memory with a P-channel cell
Author :
Ohnakado, T. ; Mitsunaga, K. ; Nunoshita, M. ; Onoda, H. ; Sakakibara, K. ; Tsuji, N. ; Ajika, N. ; Hatanaka, M. ; Miyoshi, H.
Author_Institution :
Semicond. Res. Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A novel electron injection scheme for flash memory is proposed, where band-to-band tunneling induced hot electrons (BBHE) are employed in a P-channel cell. This proposed method ensures the realization of high program efficiency, high scalability and hot-hole-injection-free operation. We also demonstrate an application of the method to DINOR (DIvided bit-line NOR) program operation. An ultra-high-speed programming of 60 nsec/Byte can be achieved with a leakage current less than 1 mA by utilizing 512 Byte parallel programming. This new DINOR flash memory is shown to be the most promising for the realization of a low-voltage, high-performance and high-reliability flash memory of 64 Mbits and beyond
Keywords :
EPROM; NOR circuits; hot carriers; integrated memory circuits; tunnelling; 64 Mbit; BBHE; DINOR flash memory; P-channel cell; band-to-band tunneling; divided bit-line NOR; electron injection; hot electrons; leakage current; low-voltage memory; parallel programming; program efficiency; scalability; ultra-high-speed programming; Acceleration; Electrons; Flash memory; Hot carriers; Laboratories; Leakage current; Nonvolatile memory; Parallel programming; Scalability; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499196
