Title :
NexFET a new power device
Author :
Xu, Shuming ; Korec, Jacek ; Jauregui, David ; Kocon, Christopher ; Molly, Simon ; Lin, Haian ; Daum, Gary ; Perelli, Steve ; Barry, Keith ; Pearce, Charles ; Lopez, Ozzie ; Herbsommer, Juan
Author_Institution :
Power Stage BU, Texas Instrum. Inc., Bethlehem, PA, USA
Abstract :
A new generation of Power MOSFET technology has been introduced. The devices are manufactured in a standard 0.35¿m CMOS production line with only few process modules being adapted for the requirements of vertical power transistors with a 2x improvement in Figure of Merit (FOM). This improvement results mainly from the reduction in Miller capacitance.
Keywords :
CMOS integrated circuits; foundries; low-power electronics; power MOSFET; CMOS production line; Miller capacitance; NexFET; power MOSFET technology; power device; process modules; size 0.35 mum; vertical power transistors; Breakdown voltage; CMOS technology; Capacitance; Clamps; Instruments; MOSFET circuits; Manufacturing processes; Power MOSFET; Power generation; Switched-mode power supply;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424400
