DocumentCode :
1654066
Title :
A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory application
Author :
Zheng, X.F. ; Zhang, W.D. ; Govoreanu, B. ; Zhang, J.F. ; Van Houdt, J.
Author_Institution :
Sch. of Eng., Liverpool John Moores Univ., Liverpool, UK
fYear :
2009
Firstpage :
1
Lastpage :
4
Abstract :
Electron trap energy distribution in the bulk of high-k materials is the essential information required for accurate retention prediction and fast material and processing optimization in Flash memory application. A new discharge-based multi-pulse technique (DMP) has been developed in this work, which, for the first time, gives this distribution across the bulk of high-k dielectric layer. Electron trap energy distributions in HfO2, Al2O3 and HfAlO stacks have been extracted and compared to identify the effects of material variation.
Keywords :
aluminium compounds; electron traps; flash memories; hafnium compounds; Al2O3; Flash memory application; HfAlO; HfO2; discharge-based multi-pulse technique; electron trap energy distribution; high-k dielectric layer; high-k materials; processing optimization; retention prediction; Aluminum oxide; Computational Intelligence Society; Electron traps; Energy states; Filling; Flash memory; High K dielectric materials; High-K gate dielectrics; Photonic band gap; Probes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
Type :
conf
DOI :
10.1109/IEDM.2009.5424403
Filename :
5424403
Link To Document :
بازگشت