Title :
Impact of dipole-induced dielectric relaxation on high-frequency performance in La-incorporated HfSiON/metal gate nMOSFET
Author :
Choi, G.B. ; Sagong, H.C. ; Lee, K.T. ; Park, M.S. ; Choi, H.S. ; Song, S.H. ; Baek, R.H. ; Park, C.H. ; Lee, S.H. ; Lee, J.S. ; Kang, C.Y. ; Tseng, H.-H. ; Jammy, R. ; Jeong, Y.H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Gyeongbuk, South Korea
Abstract :
For the first time, the relationship between high frequency and dielectric relaxation of dipoles formed at the high-k/SiO2 interface was systematically investigated in La-doped HfSiON devices. Due to the dipole-induced dielectric relaxation, it was found that high frequency performance, especially voltage gain degrades severely caused by a substantial loss in gate capacitance, transconductance, and output resistance in a frequency range below 1 GHz. Further study should be undertaken to improve the high frequency operation of La-doped high-k devices through fundamental understanding of the dipole-induced dielectric relaxation in the radio frequency (RF) regime.
Keywords :
MOSFET; dielectric relaxation; hafnium compounds; HfSiON; dipole-induced dielectric relaxation; high-frequency performance; metal gate nMOSFET; Degradation; Dielectric devices; Dielectric losses; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Performance gain; Performance loss; Radio frequency; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424404
