Title :
Reversible and irreversible degradation attributing to oxygen vacancy in HfSiON gate films during electrical stress application
Author :
Hasunuma, Ryu ; Tamura, Chihiro ; Nomura, Tsuyoshi ; Kikuchi, Yuuki ; Ohmori, Kenji ; Sato, Motoyuki ; Uedono, Akira ; Chikyow, Toyohiro ; Shiraishi, Kenji ; Yamada, Keisaku ; Yamabe, Kikuo
Author_Institution :
Univ. of Tsukuba, Tsukuba, Japan
Abstract :
The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy, and structural transformation in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While Vo generation and charge trapping are atomic-range phenomena, it is surprising that long-range structural transformation can also occur under electrical filed before dielectric breakdown even at room temperature.
Keywords :
electric breakdown; hafnium compounds; high-k dielectric thin films; solid-state phase transformations; stress effects; vacancies (crystal); Hf-based dielectrics; HfSiON; HfSiON gate film; charge trapping; dielectric degradation; electrical field; electrical stress; ion drift; ionic character; irreversible degradation; oxygen vacancy; reversible degradation; structural transformation; Annealing; Capacitance-voltage characteristics; Capacitors; Dielectric devices; Electron traps; High K dielectric materials; Thermal degradation; Thermal stresses; Tin; Voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424405
