Reversible and irreversible degradation attributing to oxygen vacancy in HfSiON gate films during electrical stress application

Author

Hasunuma, Ryu ; Tamura, Chihiro ; Nomura, Tsuyoshi ; Kikuchi, Yuuki ; Ohmori, Kenji ; Sato, Motoyuki ; Uedono, Akira ; Chikyow, Toyohiro ; Shiraishi, Kenji ; Yamada, Keisaku ; Yamabe, Kikuo

Author_Institution

Univ. of Tsukuba, Tsukuba, Japan

fYear

2009

Firstpage

1

Lastpage

4

Abstract

The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy, and structural transformation in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While V_o generation and charge trapping are atomic-range phenomena, it is surprising that long-range structural transformation can also occur under electrical filed before dielectric breakdown even at room temperature.

Keywords

electric breakdown; hafnium compounds; high-k dielectric thin films; solid-state phase transformations; stress effects; vacancies (crystal); Hf-based dielectrics; HfSiON; HfSiON gate film; charge trapping; dielectric degradation; electrical field; electrical stress; ion drift; ionic character; irreversible degradation; oxygen vacancy; reversible degradation; structural transformation; Annealing; Capacitance-voltage characteristics; Capacitors; Dielectric devices; Electron traps; High K dielectric materials; Thermal degradation; Thermal stresses; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424405

Filename

5424405