Title :
Fermi level pinning in Si, Ge and GaAs systems - MIGS or defects?
Author :
Robertson, J. ; Lin, L.
Author_Institution :
Eng. Dept, Cambridge Univ., Cambridge, UK
Abstract :
Si, Ge and III-V based MOSFETs can be limited by Fermi level pinning (FLP) at their interfaces. Pinning can arise from either intrinsic (metal induced gap states, MIGs) or extrinsic (defects) mechanisms. Identifying the correct mechanism is not trivial, as both mechanisms follow similar chemical trends. However knowing the correct mechanism is important, as only extrinsic mechanisms can be corrected by varying processing conditions. Our purpose is to clarify Schottky barrier concepts and provide some atomic models of unpinned GaAs - oxide interfaces.
Keywords :
Fermi level; III-V semiconductors; MOSFET; Schottky barriers; elemental semiconductors; gallium arsenide; germanium; silicon; Fermi level pinning; GaAs; Ge; MOSFET; Schottky barrier; Si; extrinsic defect; metal induced gap state; Aluminum oxide; Bonding; Chemicals; Gallium arsenide; III-V semiconductor materials; Insulation; MOSFETs; Metal-insulator structures; Molecular beam epitaxial growth; Schottky barriers;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424406
