Title :
Hot carrier effect on CMOS RF amplifiers
Author_Institution :
Dept. of Electr. Eng., Texas Univ., Arlington, TX, USA
Keywords :
CMOS analogue integrated circuits; UHF power amplifiers; ageing; hot carriers; 0.16 micron; 2.45 GHz; CMOS amplifiers; RF power amplifiers; aged device parameter extraction; class AB amplifier; hot carrier effects; power efficiency; stressed nMOSFET devices; wireless communications amplifier; CMOS technology; Degradation; Hot carrier effects; MOSFET circuits; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Stress; Wireless communication;
Conference_Titel :
Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
Print_ISBN :
0-7803-8803-8
DOI :
10.1109/RELPHY.2005.1493202
