High density and ultra small cell size of Contact ReRAM (CR-RAM) in 90nm CMOS logic technology and circuits

Author

Tseng, Yuan Heng ; Huang, ChiaEn ; Kuo, C.H. ; Chih, Y.-D. ; Lin, Chrong Jung

Author_Institution

Microelectron. Lab., Nat. Tsing-Hua Univ., Hsinchu, Taiwan

fYear

2009

Firstpage

1

Lastpage

4

Abstract

A new contact RRAM cell realized by TiN/TiON layers stacked between the W-plug and n+ diffusion region inside a small 80 Ã— 80 nm contact hole is demonstrated using 90nm CMOS logic technology. This work reports the first time a resistive switching characteristics of the TiON layers sandwiched between the metal and Si substrate. The new Contact ReRAM cell exhibits highly stable read window and very small cell size of 0.19Â¿m². By limiting the active ReRAM film in a small contact hole region, the cell effectively operates under a very low set voltage of 4V and a reset current of 150Â¿A, while achieving fast set and reset speed of less than 100ns and 10us, respectively. Excellent endurance of more than 1000k cycles and stable data retention characteristics further support the new Contact ReRAM (CR-RAM) cell will be a superior NVM technology for the future.

Keywords

CMOS logic circuits; random-access storage; switching; titanium compounds; CMOS logic technology; Si; Si substrate; TiN-TiON; contact ReRAM; data retention; n+ diffusion region; resistive switching; size 90 nm; ultrasmall cell size; CMOS logic circuits; CMOS process; CMOS technology; Logic arrays; Microelectronics; Nonvolatile memory; Resistors; Tin; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424408

Filename

5424408