1654179

Reliability of MIM HAO capacitor for 70NM DRAM

Hong, Kwon ; Kil, Deok-Sin ; Woo, Hyun-Kyung ; Kim, Joosung ; Song, Han-Sang ; Park, Ki-Seon ; Yeom, Seung-Jin ; Yang, Hong-Seon ; Roh, Jae-Sung ; Sohn, Hyun-Chul ; Kim, Jin-Woong ; Park, Sung-Wook

R&D Div., Hynix Semicond. Inc., Kyoungki-do, South Korea

2005

686

687

DRAM chips; MIM devices; aluminium compounds; capacitors; dielectric thin films; hafnium compounds; integrated circuit packaging; integrated circuit reliability; integrated circuit yield; 0.1 micron; 12 Å; 70 nm; DDR processes; DRAM; EFR stress; HfAlO; HfO₂-Al₂O₃; IR stress; MIM HAO capacitor module; capacitor dielectrics; capacitor package reliability; cell refresh time; cell voltage threshold; high probe test yield; long term operation lifetime test; package yield; thermal compensation; Dielectrics; Life testing; MIM capacitors; Mass production; Packaging; Probes; Random access memory; Thermal degradation; Tin; Wafer scale integration;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493205

1493205