Title :
High density plasma etch induced damage to thin gate oxide
Author :
Krishnan, Srikanth ; Aur, Shian ; Wilhite, Gordon ; Rajgopal, Rajan
Author_Institution :
Semicond. Process & Device Center, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We report here severe charging caused by an inductively coupled plasma (ICP) etch, a high density plasma tool, on devices targeted for the 0.35 μm technology mode. For the first time, direct evidence of a bi-directional charging mechanism is provided. Differential amplifiers connected to antennae exhibit offset voltage increase up to 300 mV. The lifetime of a nominal device in the presence of ICP charging is shown to reduce by a decade. Reported here for the first time is the immunity of SOI devices to such severe charging environments
Keywords :
semiconductor technology; silicon-on-insulator; sputter etching; 0.35 micron; SOI device; antenna; bi-directional charging; damage; differential amplifier; gate oxide; high density plasma etch; inductively coupled plasma; lifetime; offset voltage; Differential amplifiers; Etching; Fuses; Monitoring; Plasma applications; Plasma density; Plasma devices; Plasma sources; Testing; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499204
