Title :
Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity
Author :
Chen, Y.S. ; Lee, H.Y. ; Chen, P.S. ; Gu, P.Y. ; Chen, C.W. ; Lin, W.P. ; Liu, W.H. ; Hsu, Y.Y. ; Sheu, S.S. ; Chiang, P.-C. ; Chen, W.S. ; Chen, F.T. ; Lien, C.H. ; Tsai, M.J.
Author_Institution :
Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
A 30×30 nm2 HfOx resistance random access memory (RRAM) with excellent electrical performances is demonstrated for the scaling feasibility in this work. A 1 Kb one transistor and one resistor (1T1R) array with robust characteristics was also fabricated successfully. The device yield of the 1 Kb array is 100%, and the endurance for these devices can exceed 106 cycles by a pulse width of 40 ns. Two effective verification methods, which make a tight distribution of high resistance (RHIGH) and low resistance (RLOW) are proposed for the array to ensure a good operation window. A thin AlOx buffer layer under the HfOx layer was adopted to enhance the read disturb immunity. Without large parasitic capacitance, the 1T1R RRAM devices exhibit excellent program (PGM)/erase (ERS) disturb immunity.
Keywords :
hafnium compounds; random-access storage; highly scalable hafnium oxide memory; pulse width; read disturb immunity; resistance random access memory; resistive distribution; time 40 ns; verification methods; CMOS technology; Gettering; Hafnium oxide; Immunity testing; Industrial electronics; Low voltage; Materials science and technology; Scalability; Stochastic processes; Thermal resistance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424411
