Title :
1D thickness scaling study of phase change material (Ge2Sb2Te5) using a pseudo 3-terminal device
Author :
Bae, Byoung-Jae ; Kim, SangBum ; Zhang, Yuan ; Youngkuk Kim ; Baek, In-Gyu ; Park, Soonoh ; Yeo, In-Seok ; Choi, Siyoung ; Moon, Joo-Tae ; Wong, H. S Philip ; Kinam Kim
Author_Institution :
Process Dev. Team, Samsung Electron. Co. Ltd., Yongin, South Korea
Abstract :
1D thickness scaling study on amorphous Ge2Sb2Te5 (a-GST) has been successfully demonstrated without the help of ultra-fine lithography. Threshold switching voltage (Vth) linearly scales down to ~0.65 V at 6 nm scale, showing that stable read operation is possible at elevated temperature (70°C). Reset R drift shows no dependency on the a-GST thickness up to 6 nm regime. Thin a-GST shows enhanced thermal stability compared to thick a-GST.
Keywords :
amorphous semiconductors; antimony compounds; germanium compounds; phase change materials; phase change memories; semiconductor thin films; thermal stability; 1D thickness scaling; Ge2Sb2Te5; phase change material; pseudo 3-terminal device; reset resistance drift; size 6 nm; stable read operation; temperature 70 degC; thermal stability; threshold switching voltage; Amorphous materials; Crystallization; Fabrication; Moon; Nanostructured materials; Operational amplifiers; Phase change materials; Temperature dependence; Temperature distribution; Threshold voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424412
