1654340

Channel soft breakdown enhanced excess low-frequency noise in ultra-thin gate oxide PD analog SOI devices

Chiang, Sinclair ; Chen, M.C. ; Liao, W.S. ; You, J.W. ; Lu, M.F. ; Hsieh, Y.S. ; Lin, W.M. ; Huang-Lu, S. ; Shiau, W.T. ; Chien, S.C. ; Wang, Tahui

Central Res. & Dev. Div., UMC, Hsin-Chu, Taiwan

2005

698

699

1/f noise; MOSFET; flicker noise; semiconductor device breakdown; semiconductor device noise; semiconductor device reliability; silicon-on-insulator; tunnelling; 1.6 nm; CMOS circuit reliability; Lorentzian shaped spectrum; MOSFET; PD analog SOI devices; SBD enhanced drain current noise; SBD enhanced electron valance-band tunneling; background 1/f noise; channel soft breakdown; excess low-frequency noise; flicker noise; floating body effect; ohmic regime noise overshoot phenomenon; ultra-thin gate oxide; 1f noise; CMOS technology; Circuits; Electric breakdown; Electrons; Low-frequency noise; MOSFETs; Noise shaping; Silicon on insulator technology; Tunneling;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493211

1493211