Quantum simulations of hole transport in Si, Ge, SiGe and GaAs double-gate pMOSFETs: orientation and strain effects

Author

Cavassilas, Nicolas ; Ambrosio, Sophie D. ; Bescond, Marc

Author_Institution

IM2NP, Marseille, France

fYear

2009

Firstpage

1

Lastpage

4

Abstract

We have developed a ballistic self-consistent code which couples the six-band k.p Hamiltonian to the Green function formalism. We investigate the influence of channel material (Si, Ge, SiGe and GaAs), crystallographic orientation ([100] and [110]) and strain (biaxial and uniaxial) on the ultimate double-gate pMOSFET performances. The results show that the best configuration is obtained with strained [100]-oriented Si devices.

Keywords

Ge-Si alloys; Green´s function methods; III-V semiconductors; MOSFET; gallium arsenide; hole mobility; semiconductor device models; GaAs; Green function formalism; SiGe; ballistic self-consistent code; biaxial strain effects; crystallographic orientation; double-gate pMOSFET; hole transport; quantum simulations; uniaxial strain effects; Anisotropic magnetoresistance; Ballistic transport; Capacitive sensors; Crystalline materials; Crystallography; Gallium arsenide; Germanium silicon alloys; Green function; MOSFETs; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2009 IEEE International

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4244-5639-0

Electronic_ISBN

978-1-4244-5640-6

Type

conf

DOI

10.1109/IEDM.2009.5424418

Filename

5424418