• DocumentCode
    1654407
  • Title

    Mechanism of on-current and off-current instabilities under electrical stress in polycrystalline silicon thin-film transistors

  • Author

    De Wang, Shen ; Chang, Tzu Yun ; Lo, Wei Hsiang ; Lei, Tan Fu

  • Author_Institution
    Inst. of Electron., Nat. Chiao-Tung Univ., Hsin-Chu, Taiwan
  • fYear
    2005
  • Firstpage
    702
  • Lastpage
    703
  • Keywords
    electron traps; elemental semiconductors; hole traps; hot carriers; interface states; semiconductor device reliability; silicon; thin film transistors; Si; TFT; device channel trap states; drain-avalanche-hot-carrier damage; electrical stress; gate oxide trapped charges; interface states; off-current instabilities; on-current instabilities; polycrystalline silicon thin-film transistors; stress-induced device degradation; Circuit synthesis; Degradation; Monitoring; Optical device fabrication; Silicon; Stress measurement; Tellurium; Thermal stresses; Thin film transistors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493213
  • Filename
    1493213
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1654407