Title :
Efficient terahertz generation from InGaN/GaN Dot-in-a-wire nanostructure
Author :
Sun, Guan ; Chen, Ruolin ; Zhao, Pu ; Ding, Yujie J. ; Nguyen, Hieu P T ; Mi, Zetian
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
InGaN/GaN dot-in-a-wire nanostructure grown on Si(111) is extremely efficient for terahertz generation. The highest output power is measured to be 300 nW just from ten vertically stacked quantum dots in each quantum wire.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; nanophotonics; semiconductor quantum dots; semiconductor quantum wires; silicon; terahertz wave generation; wide band gap semiconductors; InGaN-GaN; dot-in-a-wire nanostructure; power 300 nW; quantum wire; terahertz generation; vertically stacked quantum dots; Electric fields; Gallium nitride; Optical variables measurement; Power amplifiers; Power generation; Power measurement; Quantum dots;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2012 Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1839-6
