• DocumentCode
    1654461
  • Title

    New observations on the damage relaxation mechanisms in p-MOSFETs under dynamic NBTI stressing

  • Author

    Ang, D.S. ; Wang, S.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
  • fYear
    2005
  • Firstpage
    706
  • Lastpage
    707
  • Keywords
    MOSFET; dielectric relaxation; hole traps; interface states; semiconductor device reliability; thermal stability; NBTI induced positive charge trapping; damage recovery phenomenon; damage relaxation mechanisms; dynamic NBTI reliability; dynamic NBTI stressing; interface states; p-MOSFET; static stress; threshold voltage shift; two-stage relaxation behavior; unipolar stressing; Charge pumps; Degradation; Hydrogen; MOSFET circuits; Niobium compounds; Silicon compounds; Stress; Testing; Threshold voltage; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International
  • Print_ISBN
    0-7803-8803-8
  • Type

    conf

  • DOI
    10.1109/RELPHY.2005.1493215
  • Filename
    1493215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1654461