1654518

Localization of NBT hot carrier-induced oxide damage in SOI pMOSFET´s

Lai, Chao Sung ; Hung, Shih Cheng ; Jam Wem Lee ; Chung, Steve S.

Dept. of Electr. Eng., Chang Gung Univ., Taiwan

2005

710

711

MOSFET; buried layers; hole traps; hot carriers; semiconductor device reliability; silicon-on-insulator; thermal conductivity; thermal stability; NBT; NBTI; SOI pMOSFET; activation energy; buried oxide thermal conductivity; hole trapping model; hot carrier degradation; hot carrier-induced oxide damage localization; stress-induced electron component increase; stress-induced hole component increase; Charge carrier processes; Degradation; Electron traps; MOSFET circuits; Niobium compounds; Stress; Temperature; Thermal conductivity; Threshold voltage; Titanium compounds;

English

ieee

Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International

0-7803-8803-8

conf

10.1109/RELPHY.2005.1493217

1493217