Title :
A novel semimetallic quantum well FET
Author :
Yang, M.J. ; Wang, Fu-Cheng ; Yang, C.H. ; Bennett, B.R. ; Do, T.Q.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
In this paper, we report unique three-terminal characteristics obtained from a semimetallic quantum well FET, which consists of two adjacent quantum wells, GaSb and InAs. As a result of their band alignment, both the two-dimensional (2D) electron gas and the 2D hole gas can coexist. With a standard FET structure, the 2D carrier concentration can be continuously tuned from >1012 electrons/cm2 to >1012 holes/cm2, when the gate voltage is varied from +8V to -8V. An efficient frequency-doubler utilizing this coupled dual-channel FET is demonstrated
Keywords :
III-V semiconductors; carrier density; gallium compounds; high electron mobility transistors; indium compounds; semiconductor quantum wells; two-dimensional electron gas; -8 to 8 V; 2D carrier concentration; 2D electron gas; 2D hole gas; GaSb-InAs; HEMT; adjacent quantum wells; band alignment; coupled dual-channel FET; frequency-doubler; gate voltage; semimetallic quantum well FET; three-terminal characteristics; Charge carrier processes; Educational institutions; FETs; Frequency; Gallium arsenide; Infrared detectors; Laboratories; Lattices; Two dimensional hole gas; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499218
