A novel semimetallic quantum well FET

Author

Yang, M.J. ; Wang, Fu-Cheng ; Yang, C.H. ; Bennett, B.R. ; Do, T.Q.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

1995

Firstpage

375

Lastpage

378

Abstract

In this paper, we report unique three-terminal characteristics obtained from a semimetallic quantum well FET, which consists of two adjacent quantum wells, GaSb and InAs. As a result of their band alignment, both the two-dimensional (2D) electron gas and the 2D hole gas can coexist. With a standard FET structure, the 2D carrier concentration can be continuously tuned from >10¹² electrons/cm² to >10¹² holes/cm², when the gate voltage is varied from +8V to -8V. An efficient frequency-doubler utilizing this coupled dual-channel FET is demonstrated

Keywords

III-V semiconductors; carrier density; gallium compounds; high electron mobility transistors; indium compounds; semiconductor quantum wells; two-dimensional electron gas; -8 to 8 V; 2D carrier concentration; 2D electron gas; 2D hole gas; GaSb-InAs; HEMT; adjacent quantum wells; band alignment; coupled dual-channel FET; frequency-doubler; gate voltage; semimetallic quantum well FET; three-terminal characteristics; Charge carrier processes; Educational institutions; FETs; Frequency; Gallium arsenide; Infrared detectors; Laboratories; Lattices; Two dimensional hole gas; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499218

Filename

499218