• DocumentCode
    165457
  • Title

    Fabrication of InGaAs quantum nanodisks array by using bio-template and top-down etching processes

  • Author

    Yoshikawa, Kenichi ; Higo, Akio ; Lee, C.Y. ; Tamura, Yoshinobu ; Thomas, Cedric ; Kiba, Takayuki ; Ishii, Shin ; Sodabanlu, Hassanet ; Wang, Yannan ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Yamashita, Ichiro ; Murayama, Akihiro ; Samukawa, Seiji

  • Author_Institution
    Inst. of Fluid Sci., Tohoku Univ., Sendai, Japan
  • fYear
    2014
  • fDate
    18-21 Aug. 2014
  • Firstpage
    211
  • Lastpage
    214
  • Abstract
    III-V compound semiconductor quantum dot (QD) optical devices, such as high-power lasers and high-speed modulators, have great potential for the future of telecommunications and quantum cryptographic communication. We developed a top-down method for fabricating InGaAs quantum nanodisks (NDs) arrays by using bio-template and neutral beam etching (NBE) processes. Damage-free InGaAs/GaAs nano-pillar structures were successfully fabricated for the first time. After NBE, InGaAs NDs were embedded in the GaAs barrier layer by metalorganic vapor phase epitaxy. Subsequently, the photoluminescence was measured and the emission originating from the NDs could be directly detected.
  • Keywords
    III-V semiconductors; MOCVD; etching; gallium arsenide; indium compounds; nanobiotechnology; nanofabrication; nanostructured materials; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; III-V compound semiconductor quantum dot optical devices; InGaAs-GaAs; barrier layer; biotemplate process; damage-free nanopillar structures; metalorganic vapor phase epitaxy; neutral beam etching process; photoluminescence; quantum nanodisks array; top-down etching processes; Etching; Fabrication; Gallium arsenide; Indium gallium arsenide; Quantum dot lasers; Substrates; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
  • Conference_Location
    Toronto, ON
  • Type

    conf

  • DOI
    10.1109/NANO.2014.6967975
  • Filename
    6967975