Title :
Insight into the S/D engineering by high-resolution imaging and precise probing of 2D-carrier profiles with scanning spreading resistance microscopy
Author :
Zhang, Li ; Saitoh, Masumi ; Kinoshita, Atsuhiro ; Yasutake, Nobuaki ; Hokazono, Akira ; Aoki, Nobutoshi ; Kusunoki, Naoki ; Mizushima, Ichiro ; Koike, Mitsuo ; Takeno, Shiro ; Koga, Junji
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
For the first time, high-resolution carrier imaging has been carried out on (110)/(100) pFETs and nFETs with scanning spreading resistance microscopy (SSRM). The S/D of (110) pFETs shows less lateral distribution than that of (100), strongly indicating 2D-channeling effect of boron I/I. Direct evidence has been shown that As out-diffusion under NiSi made conductive paths that degrade junction leakage on (110) nFETs. The Si:C influences on S/D profiles are also directly observed. We also succeeded in a full-FIB sample-making for the first time, showing the high potential of SSRM technology for further scaled devices.
Keywords :
carbon; carrier density; field effect transistors; optical microscopy; silicon; (110)/(100) nFET; (110)/(100) pFET; 2D-carrier profiles; 2D-channeling effect; S-D profiles; Si:C; full-FIB sample-making; high-resolution carrier imaging; lateral distribution; out-diffusion; precise probing; scanning spreading resistance microscopy; source-drain engineering; Bonding; Boron; CMOSFETs; Circuits; Degradation; Electrical resistance measurement; High-resolution imaging; Laboratories; Large scale integration; Microscopy;
Conference_Titel :
Electron Devices Meeting (IEDM), 2009 IEEE International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4244-5639-0
Electronic_ISBN :
978-1-4244-5640-6
DOI :
10.1109/IEDM.2009.5424427
