DocumentCode :
165468
Title :
Theoretical study on conductance switching of single-molecule devices
Author :
Mahmoud, Ali ; Gagliardi, Alessio ; Lugli, Paolo
Author_Institution :
Inst. fur Nanoelectron., Tech. Univ. Munchen, Munich, Germany
fYear :
2014
fDate :
18-21 Aug. 2014
Firstpage :
486
Lastpage :
489
Abstract :
Molecules that exhibit conductance switching have gained a lot of research interest in the recent years since they can be used as memory elements. There are some debates regarding the physics behind the conductance switching in some molecules. In this paper, we proposed a possible explanation for the conductance bistability exhibited by a single-molecular device. The explanation supports previous analytical and experimental attempts for identifying the sources of switching in the same testbed molecule. Moreover, it can be generalized to explain the memristive phenomenon observed in transition-metal oxides.
Keywords :
memristors; molecular electronics; transition metals; conductance bistability; conductance switching; memory elements; memristive phenomenon; single-molecular device; testbed molecule; transition-metal oxides; Conductivity; Crystals; Electrodes; Hydrogen; Metals; Physics; Switches; Molecular devices; memristors; switching conductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
Type :
conf
DOI :
10.1109/NANO.2014.6967981
Filename :
6967981
Link To Document :
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