Title :
Tower structure Si field emitter arrays with large emission current
Author :
Hori, Yoshikazu ; Koga, Keisuke ; Sakiyama, Kazuyuki ; Kanemaru, Seigo ; Itoh, Junji
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
Abstract :
Effects of structure parameters of our proposed “tower structure Si FEAs” and their process latitude are studied for realizing FEAs with low voltage operation and uniform field emission. High density Si FEAs with sub-micron gate diameter and extremely sharp emitter tips have been uniformly fabricated by using VLSI process technologies. In addition to low voltage operation, large current density and stable field emission have been demonstrated
Keywords :
integrated circuit technology; silicon; vacuum microelectronics; Si; VLSI process technologies; current density; emission current; fabrication; field emitter arrays; high density Si FEAs; low voltage operation; process latitude; sub-micron gate; tower structure; Cathodes; Current density; Displays; Energy consumption; Fabrication; Field emitter arrays; Laboratories; Low voltage; Poles and towers; Very large scale integration;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499222
