DocumentCode
1654725
Title
Tower structure Si field emitter arrays with large emission current
Author
Hori, Yoshikazu ; Koga, Keisuke ; Sakiyama, Kazuyuki ; Kanemaru, Seigo ; Itoh, Junji
Author_Institution
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
fYear
1995
Firstpage
393
Lastpage
396
Abstract
Effects of structure parameters of our proposed “tower structure Si FEAs” and their process latitude are studied for realizing FEAs with low voltage operation and uniform field emission. High density Si FEAs with sub-micron gate diameter and extremely sharp emitter tips have been uniformly fabricated by using VLSI process technologies. In addition to low voltage operation, large current density and stable field emission have been demonstrated
Keywords
integrated circuit technology; silicon; vacuum microelectronics; Si; VLSI process technologies; current density; emission current; fabrication; field emitter arrays; high density Si FEAs; low voltage operation; process latitude; sub-micron gate; tower structure; Cathodes; Current density; Displays; Energy consumption; Fabrication; Field emitter arrays; Laboratories; Low voltage; Poles and towers; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499222
Filename
499222
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