Title :
Volcano-shaped field emitters for large area displays
Author :
Busta, H. ; Gammie, G. ; Skala, S. ; Pogemiller, J. ; Nowicki, R. ; Hubacek, J. ; Devine, D. ; Rao, R. ; Urbanek, W.
Author_Institution :
Coloray Display Corp., Fremont, CA, USA
Abstract :
Individual and groups of 3×3 and 10×10 gated volcano-shaped field emitters have been processed with gate dimensions of 4, 8, 14, 25 and 50 μm and gate-to-emitter rim distances of 1.0 and 0.25 μm. The 0.25 μm devices are fabricated with a stepped oxide process which does not increase the gate-to-emitter capacitance significantly. Turn-on voltages range from 80-90 V for the 0.25 μm devices and are about 250 V for the 1.0 μm devices. I-V characteristics will be presented as well as an integration scheme for the formation of matrix-addressable arrays for field emitter display (FED) applications
Keywords :
electron field emission; large screen displays; vacuum microelectronics; 0.25 micron; 1.0 micron; 250 V; 80 to 90 V; I-V characteristics; capacitance; fabrication; field emitter displays; integration; large area displays; matrix-addressable arrays; stepped oxide process; turn-on voltages; volcano-shaped field emitters; Capacitance; Chromium; Displays; Etching; Fabrication; Resists; Silicon; Transmission line matrix methods; Volcanoes; Voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499225
