Volcano-shaped field emitters for large area displays

Author

Busta, H. ; Gammie, G. ; Skala, S. ; Pogemiller, J. ; Nowicki, R. ; Hubacek, J. ; Devine, D. ; Rao, R. ; Urbanek, W.

Author_Institution

Coloray Display Corp., Fremont, CA, USA

fYear

1995

Firstpage

405

Lastpage

408

Abstract

Individual and groups of 3×3 and 10×10 gated volcano-shaped field emitters have been processed with gate dimensions of 4, 8, 14, 25 and 50 μm and gate-to-emitter rim distances of 1.0 and 0.25 μm. The 0.25 μm devices are fabricated with a stepped oxide process which does not increase the gate-to-emitter capacitance significantly. Turn-on voltages range from 80-90 V for the 0.25 μm devices and are about 250 V for the 1.0 μm devices. I-V characteristics will be presented as well as an integration scheme for the formation of matrix-addressable arrays for field emitter display (FED) applications

Keywords

electron field emission; large screen displays; vacuum microelectronics; 0.25 micron; 1.0 micron; 250 V; 80 to 90 V; I-V characteristics; capacitance; fabrication; field emitter displays; integration; large area displays; matrix-addressable arrays; stepped oxide process; turn-on voltages; volcano-shaped field emitters; Capacitance; Chromium; Displays; Etching; Fabrication; Resists; Silicon; Transmission line matrix methods; Volcanoes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499225

Filename

499225