Investigation of inner surface of silicon microchannels fabricated by electrochemical method

Author

Ci, Pengliang ; Shi, Jing ; Sun, Li ; Liu, Tao ; Wang, Lianwei ; Chu, Paul K.

Author_Institution

Dept. of Electron. Eng., East China Normal Univ., Shanghai, China

fYear

2010

Firstpage

396

Lastpage

397

Abstract

Various silicon-based microchannels with different internal surface morphology is investigated to grow CNTs (carbon nanotubes) on the surface of the pore wall which may enhance the electron emission. The morphology of the samples prepared under different conditions is determined by scanning electron microscopy (SEM). Parameters such as temperature, concentration of hydrofluoric acid, potential, current density, and so on are found to affect the inner surface of the pore wall.

Keywords

carbon nanotubes; current density; electrochemistry; elemental semiconductors; micromechanical devices; porous semiconductors; scanning electron microscopy; silicon; surface morphology; C; Si; carbon nanotubes; current density; electrochemical method; electron emission; hydrofluoric acid; internal surface morphology; pore wall; scanning electron microscopy; silicon microchannel inner surface; Carbon nanotubes; Current density; Etching; Hafnium; Microchannel; Scanning electron microscopy; Shape control; Silicon; Surface morphology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoelectronics Conference (INEC), 2010 3rd International

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-3543-2

Electronic_ISBN

978-1-4244-3544-9

Type

conf

DOI

10.1109/INEC.2010.5424440

Filename

5424440