DocumentCode
1654976
Title
A high performance 0.1 μm MOSFET with asymmetric channel profile
Author
Hiroki, Akira ; Odanaka, Shinji ; Hori, Atsushi
Author_Institution
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Moriguchi, Japan
fYear
1995
Firstpage
439
Lastpage
442
Abstract
This paper describes nonequilibrium transport phenomenon, practical fabrication process, and potential design of an asymmetric 0.1 μm n-MOSFET for the first time. The self-consistent Monte Carlo device simulation coupled with a process simulator reveals the carrier velocity overshoot at the source side of the channel. It is found that the 0.1 μm MOSFET with asymmetric channel profile realizes high device performance due to the high carrier velocity
Keywords
CMOS integrated circuits; MOSFET; Monte Carlo methods; doping profiles; ion implantation; 0.1 micron; Monte Carlo device simulation; asymmetric channel profile; carrier velocity overshoot; fabrication process; high performance NMOSFET; n-MOSFET; n-channel MOSFET; nonequilibrium transport phenomenon; Boron; Electrodes; Equations; Fabrication; Impurities; MOSFET circuits; Monte Carlo methods; Surface resistance; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499233
Filename
499233
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