Title :
Dynamic Terahertz switch based on waveguide-cavity-waveguide (WCW) structure
Author :
Aghadjani, Mahdi ; Mazumder, Prasenjit
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci. (EECS), Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
In this brief, a THz switch consisting of GaAs dielectric slab waveguide with periodic perfect conductor patches on its top and bottom is demonstrated. The performance is based on waveguide-cavity-waveguide structure. By pumping optical signal into the slab waveguide and changing the carrier density of semiconductor directly underneath the patches, and modulating the refractive index of GaAs dielectric it switches between on-state and off-state.
Keywords :
III-V semiconductors; carrier density; dielectric waveguides; gallium arsenide; microwave switches; GaAs; GaAs dielectric slab waveguide; THz switch; WCW structure; carrier density; dynamic terahertz switch; optical signal; periodic perfect conductor patches; refractive index; waveguide-cavity-waveguide structure; Electronic mail; Electrooptical waveguides; IP networks; Indexes; Optical switches; Permittivity; Optical pumping; THz; cavity; free carrier concentration;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on
Conference_Location :
Toronto, ON
DOI :
10.1109/NANO.2014.6967996
