A comparative study of CVD TiN and CVD TaN diffusion barriers for copper interconnection

Author

Sun, S.C. ; Tsai, M.H. ; Chiu, H.T. ; Chuang, S.H. ; Tsai, C.E.

Author_Institution

Nat. Nano Device Lab., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

1995

Firstpage

461

Lastpage

464

Abstract

In this paper, the barrier properties of metalorganic CVD TiN and CVD TaN between Cu and Si under similar process conditions are compared. Thermal stability was investigated by microstructural analysis and junction diode leakage current. Results indicate that CVD TiN and CVD TaN films have comparable thermal stability. A post-deposition treatment using rapid thermal annealing in ammonia at temperatures greater than 600°C was found to improve the thermal stability and to lower the film resistivity

Keywords

CVD coatings; diffusion barriers; electrical resistivity; integrated circuit interconnections; integrated circuit metallisation; leakage currents; rapid thermal annealing; tantalum compounds; thermal stability; titanium compounds; 12000 muohmcm; 340 C; 450 C; 600 to 800 C; 7000 muohmcm; CVD TaN diffusion barriers; CVD TiN diffusion barriers; Cu interconnection; Cu-TaN-Si; Cu-TiN-Si; NH₃; film resistivity; film thickness effects; junction diode leakage current; metalorganic CVD; microstructural analysis; post-deposition treatment; rapid thermal annealing; thermal stability; Conductivity; Diodes; Leakage current; Rapid thermal annealing; Rapid thermal processing; Stability analysis; Temperature; Thermal resistance; Thermal stability; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

0-7803-2700-4

Type

conf

DOI

10.1109/IEDM.1995.499238

Filename

499238