CuInSe2/Zn(S,O,OH) junction on Mo foil by electrochemical and chemical route for photovoltaic applications

In this work, we are reporting results on the electrodeposition of the CuInSe₂ thin films on molybdenum thin foil substrates. We have used an aqueous non-buffered electrolyte and a careful choice of deposition parameters to ensure a good quality and composition of the deposited films. In addition, CdS was replaced in the buffer layer with a wider bandgap Zn(S,O,OH) film obtained by chemical bath deposition. The deposited films were annealed in inert atmosphere at different temperatures. The influence of annealing temperature on the properties of the films is briefly discussed. Films were also characterized by photoelectrochemical and I-V measurements. Structural characterization was carried out by XRD and Raman spectroscopy. Results show the growth of good quality films with very uniform morphology and good chemical composition.