DocumentCode
1655194
Title
In situ CMP monitoring technique for multi-layer interconnection
Author
Fukuroda, Atsushi ; Nakamura, KO ; Arimoto, Yoshihiro
Author_Institution
Fujitsu Labs. Ltd., Atsugi, Japan
fYear
1995
Firstpage
469
Lastpage
472
Abstract
An all-around in situ monitor for CMP was developed. It can detect the even surface during planarization, polishing pad wear, lack of uniformity on the surface of a wafer, and the interface of different materials. In this method, small vibrations of the polishing head were detected by using an accelerometer, and signal processing techniques were used to determine polishing events
Keywords
integrated circuit interconnections; integrated circuit measurement; monitoring; polishing; surface topography measurement; vibration measurement; accelerometer; chemical mechanical polishing; even surface detection; in situ CMP monitoring technique; material interface; multi-layer interconnection; planarization; polishing head; polishing pad wear; signal processing techniques; small vibration detection; wafer surface nonuniformity; Accelerometers; Dielectric measurements; Monitoring; Optical sensors; Optical signal processing; Optical surface waves; Optical transmitters; Planarization; Thickness measurement; Vibration measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
0-7803-2700-4
Type
conf
DOI
10.1109/IEDM.1995.499240
Filename
499240
Link To Document