Title :
In situ CMP monitoring technique for multi-layer interconnection
Author :
Fukuroda, Atsushi ; Nakamura, KO ; Arimoto, Yoshihiro
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
An all-around in situ monitor for CMP was developed. It can detect the even surface during planarization, polishing pad wear, lack of uniformity on the surface of a wafer, and the interface of different materials. In this method, small vibrations of the polishing head were detected by using an accelerometer, and signal processing techniques were used to determine polishing events
Keywords :
integrated circuit interconnections; integrated circuit measurement; monitoring; polishing; surface topography measurement; vibration measurement; accelerometer; chemical mechanical polishing; even surface detection; in situ CMP monitoring technique; material interface; multi-layer interconnection; planarization; polishing head; polishing pad wear; signal processing techniques; small vibration detection; wafer surface nonuniformity; Accelerometers; Dielectric measurements; Monitoring; Optical sensors; Optical signal processing; Optical surface waves; Optical transmitters; Planarization; Thickness measurement; Vibration measurement;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499240
