Title :
CMOS process design for minimization of IC power consumption using TCAD
Author :
Schwerin, A.V. ; Schumann, D. ; Berthold, J.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
CMOS low-voltage process design is presented as an example of industrial application of technology CAD. TCAD tools are used to evaluate GP, the gain in power efficiency (i.e. battery lifetime) which is achievable by reduction of supply voltage (Vdd ) with adaptation of threshold voltage (Vth) and gate length scaling for constant performance. The trade-off between leakage and active power depending on the IC properties is studied. Maximum G P found for a 16 bit microprocessor with 32 kB on chip SRAM is about 7 for Vth of ±0.3V and Vdd of 1.3V
Keywords :
CMOS digital integrated circuits; circuit CAD; circuit optimisation; integrated circuit design; microprocessor chips; minimisation; 1.3 V; 16 bit; 16 bit microprocessor; CMOS low-voltage process design; IC power consumption minimization; TCAD; battery lifetime; gate length scaling; leakage active power tradeoff; on chip SRAM; power efficiency; supply voltage reduction; technology CAD; threshold voltage; Batteries; CMOS integrated circuits; CMOS process; CMOS technology; Design automation; Electricity supply industry; Energy consumption; Performance gain; Process design; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499242
