Title :
Semiconductor nanowires as a bottom-up approach to realize nanoelectronic and nanophotonic devices
Author_Institution :
Solid State Physcis/the Nanometer Struct. Consortium, Lund Univ., Lund, Sweden
Abstract :
In this presentation will be given an up-date of the status of epitaxially grown III-V nanowires, from the perspective of growth, processing, physics and applications in the areas of nanoelectronics and nanophotonics.
Keywords :
III-V semiconductors; integrated optoelectronics; nanoelectronics; nanophotonics; nanowires; III-V nanowires; bottom-up approach; nanoelectronic; nanophotonic devices; semiconductor nanowires; Gallium arsenide; III-V semiconductor materials; Light emitting diodes; Nanoscale devices; Nanostructures; Nanowires; Optical coupling; Photovoltaic cells; Silicon; Solid state circuits;
Conference_Titel :
Nanoelectronics Conference (INEC), 2010 3rd International
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-3543-2
Electronic_ISBN :
978-1-4244-3544-9
DOI :
10.1109/INEC.2010.5424453
