Electrical and pH sensing characteristics of Si nanowire-based suspended FET biosensors

Author

Kihyun Kim ; Chanoh Park ; Taiuk Rim ; Meyyappan, M. ; Jeong-Soo Lee

Author_Institution

Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang, South Korea

fYear

2014

fDate

18-21 Aug. 2014

Firstpage

768

Lastpage

771

Abstract

The dependence of nanowire width on the stiction-free structure and the influence of stiction on the electrical performance in the suspended nanowire (NW-SUS) ion-sensitive field-effect transistors (ISFETs) are investigated. The NW-SUS ISFETs without stiction are successfully fabricated using advanced microfabrication technology. The stiction-free NW-SUS ISFETs exhibit excellent electrical characteristics due to gate-all-around (GAA) structure. Furthermore, the stiction- free NW-SUS ISFETs show higher sensitivity in pH sensing, compared to the conventional devices. These investigations provide an opportunity for developing sensor platform with high sensitivity in the future.

Keywords

bioMEMS; biosensors; electrochemical sensors; ion sensitive field effect transistors; microfabrication; nanosensors; nanowires; pH; silicon; stiction; GAA; Si nanowire-based suspended FET biosensor; advanced microfabrication technology; conventional devices; electrical characteristics; electrical performance; gate-all-around structure; nanowire width; pH sensing characteristics; sensor platform; stiction-free NW-SUS ISFET; stiction-free structure; suspended nanowire ion-sensitive field-effect transistors; Logic gates; Nanobioscience; Nanoscale devices; Performance evaluation; Sensitivity; Sensors; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference on

Conference_Location

Toronto, ON

Type

conf

DOI

10.1109/NANO.2014.6968007

Filename

6968007