مرکز منطقه ای اطلاع رساني علوم و فناوري - Reference voltages and their stress-induced changes in thin film transistors as determined by charge pumping

DocumentCode :

1655516

Title :

Reference voltages and their stress-induced changes in thin film transistors as determined by charge pumping

Author :

Balasinski, A. ; Worley, J. ; Zamanian, M. ; Liou, F.T.

Author_Institution :

Adv. Technol. Dev., SGS-Thomson Microelectron., Phoenix, AZ, USA

fYear :

1995

Firstpage :

529

Lastpage :

532

Abstract :

Application of Charge Pumping (CP) technique to determine threshold (V_T) and flatband (V_FB) voltages in Thin Film Transistors (TFTs) is demonstrated. Based on frequency dependent CP measurement, gate voltage dependent surface carrier concentration has been derived which can be used to develop models of TFT operation. Stress-induced shifts of V_T and V_FB have been investigated using the proposed technique

Keywords :

MOSFET; carrier density; thin film transistors; TFT operation; charge pumping; flatband voltages; frequency dependent measurement; gate voltage dependent surface carrier concentration; models; reference voltages; stress-induced changes; stress-induced shifts; thin film transistors; threshold voltage; Annealing; Charge measurement; Charge pumps; Current measurement; Frequency estimation; Frequency measurement; MOSFETs; Pulse measurements; Thin film transistors; Threshold voltage;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Electron Devices Meeting, 1995. IEDM '95., International

Conference_Location :

Washington, DC

ISSN :

0163-1918

Print_ISBN :

0-7803-2700-4

Type :

conf

DOI :

10.1109/IEDM.1995.499254

Filename :

499254

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1655516