• DocumentCode
    1655516
  • Title

    Reference voltages and their stress-induced changes in thin film transistors as determined by charge pumping

  • Author

    Balasinski, A. ; Worley, J. ; Zamanian, M. ; Liou, F.T.

  • Author_Institution
    Adv. Technol. Dev., SGS-Thomson Microelectron., Phoenix, AZ, USA
  • fYear
    1995
  • Firstpage
    529
  • Lastpage
    532
  • Abstract
    Application of Charge Pumping (CP) technique to determine threshold (VT) and flatband (VFB) voltages in Thin Film Transistors (TFTs) is demonstrated. Based on frequency dependent CP measurement, gate voltage dependent surface carrier concentration has been derived which can be used to develop models of TFT operation. Stress-induced shifts of VT and VFB have been investigated using the proposed technique
  • Keywords
    MOSFET; carrier density; thin film transistors; TFT operation; charge pumping; flatband voltages; frequency dependent measurement; gate voltage dependent surface carrier concentration; models; reference voltages; stress-induced changes; stress-induced shifts; thin film transistors; threshold voltage; Annealing; Charge measurement; Charge pumps; Current measurement; Frequency estimation; Frequency measurement; MOSFETs; Pulse measurements; Thin film transistors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1995. IEDM '95., International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-2700-4
  • Type

    conf

  • DOI
    10.1109/IEDM.1995.499254
  • Filename
    499254
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1655516