Title :
Silicon film thickness and material dependence of “reverse short channel effect” for SOI NMOSFETs
Author :
Rajgopal, Rajan ; Schiebel, Richard ; Iyer, S. Sundar ; Joyner, Keith ; Houston, Theodore W.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Reverse Short Channel Effect (RSCE) effect in SOI devices is observed and is found dependent on silicon overlayer thickness. No correlation between MDD implant dose and RSCE is observed. RSCE is found to depend on material quality. All result can be explained by the dopant (boron) pile-up at the source-drain model
Keywords :
MOSFET; boron; doping profiles; interstitials; semiconductor device models; semiconductor thin films; silicon-on-insulator; MDD implant dose; SOI NMOSFETs; Si film thickness; Si overlayer thickness; Si:B; dopant pile-up; material dependence; material quality; moderately doped drain; reverse short channel effect; source-drain model; Boron; Diodes; Implants; Leakage current; MOS devices; MOSFETs; Semiconductor device modeling; Semiconductor films; Semiconductor process modeling; Silicon;
Conference_Titel :
Electron Devices Meeting, 1995. IEDM '95., International
Conference_Location :
Washington, DC
Print_ISBN :
0-7803-2700-4
DOI :
10.1109/IEDM.1995.499255
