Title :
Evaluation of the absorption spectrum in quantum dots for efficient solar cells
Author :
Giannoccaro, Giovanni ; Muciaccia, Tommaso ; Passaro, Vittorio M. N.
Author_Institution :
Dipt. di Ing. Elettr. e dell´Inf., Politec. di Bari, Bari, Italy
Abstract :
Today, possibility of photovoltaic efficiency increase with use of semiconductor quantum dots (QDs) in solid inorganic solar cells is a dynamic research field due to nanotechnology development and use of III-V and III-V nitride semiconductors (GaN or InGaN). Self-assembled quantum dots (SAQDs) growth in Stranski-Krastanov (SK) mode are very interesting nano-structures in order to achieve this goal. In this paper results derived by a FEM simulation analysis of absorption coefficient done on small zincblende InAs/GaAs and wurtzite InxGa1-xN/InyGa1-yN (In content x > y) SAQDs are shown and related to possible use in solar cells.
Keywords :
III-V semiconductors; absorption coefficients; finite element analysis; gallium arsenide; indium compounds; self-assembly; semiconductor quantum dots; solar cells; FEM simulation analysis; III-V nitride semiconductors; InxGa1-xN-InyGa1-yN; InAs-GaAs; SAQD growth; Stranski-Krastanov mode; absorption coefficient; indium gallium nitride; nanostructures; nanotechnology development; photovoltaic efficiency; self-assembled quantum dots; semiconductor quantum dots; solar cell efficiency; solid inorganic solar cells; zincblende indium arsenide-gallium arsenide; Absorption; Chemicals; Gallium arsenide; III-V semiconductor materials; Scattering; Solids; Strain; InAs/GaAs QDs; InGaN; absorption coefficient; crystal elastic deformation; piezoelectricity; pyroelectricity; self-assembled quantum dots; solar cell;
Conference_Titel :
Photonics Technologies, 2014 Fotonica AEIT Italian Conference on
Conference_Location :
Naples
Print_ISBN :
978-8-8872-3718-4
DOI :
10.1109/Fotonica.2014.6843954
